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74V1G66
SINGLE BILATERAL SWITCH
s
s
s
s
s
HIGH SPEED: tPD = 0.3 ns (TYP.) at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.3V LOW POWER DISSIPATION: ICC = 1 A (MAX.) at TA = 25 oC LOW "ON" RESISTANCE: RON = 10 (TYP.)AT VCC = 5.0V II/O=100A RON = 12 (TYP.)AT VCC = 3.3V II/O=100A SINE WAVE DISTORTION 0.04% (TYP.) AT VCC=3.3V f=1KHz WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5V
SOT23-5L
ORDER CODES PACKAGE SOT23-5L SC-70 T UBE
SC-70
T&R 74V1G66S-TR 74V1G66C-TR
DESCRIPTION The 74V1G66 is an high-speed CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This feature makes this part ideal for battery-powered equipment. This bilateral switch handles rail to rail analog and digital signals that may vary across the full
power-supply range (from Vcc to Ground). The C input is provided to control the switch and it's compatible with standard CMOS output; the switch is ON when the C input is held high and off when C is held low. It can be used in many application as Battery Powered System, Audio Signal Routing, Communications System, Test Equipment. It's available in the commercial temperature range in SOT23-5L and SC-70-5L package.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
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74V1G66
LOGIC DIAGRAM PIN DESCRIPTION
PIN No 1 2 4 3 5 SYMBOL I/O O/I C GND VCC NAME AND FUNCT ION Independent Input/Output Independent Output/Input Enable Input (Active HIGH) Ground (0V) Positive Supply Voltage
TRUTH TABLE
CONTROL H L SWITCH F UNCTIO N ON OFF
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI V IC VO IIK IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Control Input Voltage DC Output Voltage DC Input Diode Current DC Control Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to 7 -0.5 to VCC + 0.5 20 - 20 20 50 50 -65 to +150 300 Unit V V V V mA mA mA mA mA
o o
ICC or IGND DC VCC or Ground Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI V IC VO Top dt/dv Input Voltage Control Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 5.5 0 to VCC 0 to 5.5 0 to VCC -40 to +85 0 to 10 Unit V V V V
o
C
ns/V
1) Truth Table guaranteed: 1.2V to 5.5V 2) VIN from 30% to70%VCC
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74V1G66
DC SPECIFICATIONS
Symb ol Parameter V CC (V) VIH High Level Control Input Voltage Low Level Control Input Voltage ON Resistance 2.0 2.7 to 5.5 2.0 2.7 to 5.5 3.3 (**) 5.0 (*) 3.3
(**)
T est Cond ition s Min. 1.5 0.7VCC Typ .
Value T A = 25 o C Max. -40 to 85 o C Min . 1.5 0.7VCC 0.5 0.3VCC 0.5 0.3VCC 30 20 Max.
Un it
V
VIL
V
R ON
V IC = V IH V I/O = V CC to G ND II/ O 1mA V IC = V IH V I/ O = VCC or GND II/ O 1mA V OS = V CC to GND V IS = V CC to G ND V I C = VI L VOS = VCC to GND VIC = VIH VIC = 5.5V or GND V IC = V CC or GND
14 12 12 10
26 17 18 14 0.1
24 18 1.0
5.0 (*) IOFF Input/Output Leakage Current (SWITCH OFF) Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) Control Input Leakage Current Quiescent Supply Current 5.5
A A
IIZ
5.5
0.1
1.0
IIN ICC
0 to 5.5 5.5
0.1 1
1.0 10
A A
(*) Voltage range is 5V 0.5V (**) Voltagerange is 3.3V 0.3V
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74V1G66
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t r = tf =3 ns)
Symb ol Parameter V CC (V) tPD tPZL tPZH tPLZ tPHZ C IN CI/O CPD Delay Time Output Enable Time Output Disable Time Input Capacitance Switch Terminal Capacitance Power Dissipation Capacitance (note 1) 3.3 5.0 3.3 5.0(**) 3.3(*) 5.0(**) 3.3(*) 5.0(**)
(*)
Test Co ndition
Value T A = 25 o C Min. Typ . Max. 0.4 0.3 2.5 2.0 5.0 5.0 5 10 2.5 3 0.8 0.6 4.0 4.0 7.5 7.5
Un it -40 to 85 o C Min . Max. 1.2 1.0 5.0 5.0 9.0 9.0 ns ns ns pF pF pF
t r = tf =6 ns R L = 1k R L = 500
1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD * VCC * fIN + ICC (switch). (*) Voltage range is 3.3V 0.3V (**) Voltagerange is 5V 0.5V
ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC)
Symb ol Parameter V CC (V) 3.3 5.0(*) 3.3 5.0(*) 3.3 5.0(*) 3.3 5.0(*) V IN (Vp-p) 2.75 4 Adjust fI N voltage to Obtain 0dBm at V OS . Increase fIN Frequency until dB Meter reads -3dB R L = 50, C L = 10pF VIN is centered at VCC /2. Adjust fIN voltage to obtain 0dBm at VIS RL = 600, CL = 50pF, fIN = 1MHz sine wave R L = 600, CL = 50pF, fIN = 1MHz square wave tr = tf = 6 ns Test Co nditi on Value Un it
Sine Wave Distortion (THD) fMAX Frequency Response (Switch ON) Feedthrough Attenuation (Switch OFF) Crosstalk (Control Input to Signal Output)
(*) Voltage range is 5V 0.5V
fIN = 1 KHz
RL = 10K
CL = 50 pF
0.04 0.04 150 180 -60 -60 60 60
% MHz
dB
mV
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74V1G66
SWITCHING CHARACTERISTICS TEST CIRCUIT tPLZ, tPHZ, tPZL, tPZH.
FEEDTHROUGH ATTENUATION
BANDWIDTH ATTENUATION
CI-O CI/O
MAXIMUM CONTROL FREQUENCY
GND (VSS)
CROSSTALK (control to output)
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74V1G66
CHANNEL RESITANCE (RON) ICC (Opr.)
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74V1G66
SOT23-5L MECHANICAL DATA
mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 1.9 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 21.6
DIM.
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74V1G66
SC-70 MECHANICAL DATA
mm MIN. A A1 A2 b C D E E1 L e e1 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.10 0.65 1.3 TYP. MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 0.30 MIN. 31.5 0.0 31.5 5.9 3.9 70.9 70.9 45.3 3.9 25.6 51.2 mils TYP. MAX. 43.3 3.9 39.4 11.8 7.1 86.6 94.5 53.1 11.8
DIM.
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74V1G66
Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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